Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN19020DFF User Manual
Page 4
ZXTN19020DFF
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Collector-base breakdown voltage BV
CBO
70
100
V
I
C
= 100
A
Collector-emitter breakdown
voltage (forward blocking)
BV
CEX
70
100
V
I
C
= 100
A, R
BE
Յ 1k⍀ or
-1V < V
BE
< 0.25V
Collector-emitter breakdown
voltage (base open)
BV
CEO
20
30
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ300s; duty cycle Յ2%.
Emitter-base breakdown voltage BV
EBO
7
8.4
V
I
E
= 100
A
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
6
8.4
V
I
E
= 100
A, R
BC
Յ 1k⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
4.5
5.7
V
I
E
= 100
A,
Collector-base cut-off current
I
CBO
<1
50
20
nA
A
V
CB
= 56V
V
CB
= 56V, T
amb
= 100°C
Collector-emitter cut-off current
I
CEX
-
100
nA
V
CE
= 56V, R
BE
Յ 1k⍀ or
-1V < V
BE
< 0.25V
Emitter-base cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
25
30
mV
I
C
= 1A, I
B
= 100mA
45
65
mV
I
C
= 1A, I
B
= 10mA
70
95
mV
I
C
= 2A, I
B
= 20mA
55
75
mV
I
C
= 2A, I
B
= 40mA
140
190
mV
I
C
= 6.5A, I
B
= 180mA
Base-emitter saturation voltage
V
BE(sat)
940
1050
mV
I
C
= 6.5A, I
B
= 180mA
Base-emitter turn-on voltage
V
BE(on)
830
950
mV
I
C
= 6.5A, V
CE
= 2V
Static forward current transfer
ratio
h
FE
300
450
900
I
C
= 0.1A, V
CE
= 2V
260
420
I
C
= 2A, V
CE
= 2V
160
270
I
C
= 6.5A, V
CE
= 2V
50
80
I
C
= 15A, V
CE
= 2V
Transition frequency
f
T
160
MHz I
C
= 50mA, V
CE
= 10V
f
= 50MHz
Input capacitance
C
ibo
297
pF
V
EB
= 0.5V, f
= 1MHz
Output capacitance
C
obo
32.6
40
pF
V
CB
= 10V, f
= 1MHz
Delay time
t
d
129
ns
V
CC
= 10V.
I
C
= 1A,
I
B1
= -I
B2
= 10mA.
Rise time
t
r
96
ns
Storage time
t
s
398
ns
Fall time
t
f
90
ns