Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN19020CFF User Manual
Page 4
ZXTN19020CFF
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Collector-base breakdown voltage BV
CBO
65
85
V
I
C
= 100
A
Collector-emitter breakdown
voltage (forward blocking)
BV
CEX
65
85
V
I
C
= 100
A, R
BE
< 1k
⍀ or
-1V < V
BE
< 0.25V
Collector-emitter breakdown
voltage (base open)
BV
CEO
20
25
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ300s; duty cycle Յ2%.
Emitter-base breakdown voltage
BV
EBO
7
8.3
V
I
E
= 100
A
Emitter-collector breakdown
voltage (reverse blocking)
BV
ECX
6
8.2
V
I
E
= 100
A, R
BC
< 1k
⍀ or
0.25V > V
BC
> -0.25V
Emitter-collector breakdown
voltage (base open)
BV
ECO
4.5
5.3
V
I
E
= 100
A,
Collector-base cut-off current
I
CBO
<1
50
20
nA
A
V
CB
= 50V
V
CB
= 50V, T
amb
= 100°C
Collector-base cut-off current
I
CEX
<1
100
nA
V
CE
= 50V, R
BE
< 1k
⍀ or
-1V < V
BE
< 0.25V
Emitter-base cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
23
30
mV
I
C
= 1A, I
B
= 100mA
45
65
mV
I
C
= 1A, I
B
= 10mA
55
70
mV
I
C
= 2A, I
B
= 40mA
135
175
mV
I
C
= 7A, I
B
= 280mA
Base-emitter saturation voltage V
BE(sat)
960
1050
mV
I
C
= 7A, I
B
= 280mA
Base-emitter turn-on voltage
V
BE(on)
840
950
mV
I
C
= 7A, V
CE
= 2V
Static forward current transfer
ratio
h
FE
200
350
500
I
C
= 0.1A, V
CE
= 2V
180
340
I
C
= 2A, V
CE
= 2V
100
220
I
C
= 7A, V
CE
= 2V
45
95
I
C
= 15A, V
CE
Transition frequency
f
T
150
MHz I
C
= 50mA, V
CE
= 10V
f
=50MHz
Input capacitance
C
ibo
315
pF
V
EB
= 0.5V, f
= 1MHz
Output capacitance
C
obo
40
50
pF
V
CB
= 10V, f
= 1MHz
Delay time
t
d
135
ns
V
CC
=10 V.
I
C
=1A,
I
B1
= I
B2
=10mA.
Rise time
t
r
117
ns
Storage time
t
s
285
ns
Fall time
t
f
88
ns