Electrical characteristics – Diodes ZXT13P20DE6 User Manual
Page 4
ZXT13P20DE6
Document Number: DS33638 Rev: 2 - 2
4 of 7
December 2013
© Diodes Incorporated
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
ZXT13P20DE6
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-25 -55
V
I
C
= -100μA
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
-20 -50
V
I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-7.5 -8.5
V
I
E
= -100μA
Collector-Base Cutoff Current
I
CBO
-100 nA
V
CB
= -20V
Emitter Cutoff Current
I
EBO
-100 nA
V
EB
= -6V
Collector-Emitter Cutoff Current
I
CES
-100 nA
V
CES
= -20V
ON CHARACTERISTICS (Note 9)
DC Current Gain
h
FE
300 500
I
C
= -10mA, V
CE
= -2V
300 450 900
I
C
= -1A, V
CE
= -2V
150 250
I
C
= -3.5A, V
CE
= -2V
10
I
C
= -10A, V
CE
= -2V
Collector-Emitter Saturation Voltage
V
CE(sat)
-10 -15
mV
I
C
= -100mA, I
B
= -10mA
-100 -130
I
C
= -1A, I
B
= -10mA
-165 -250
I
C
= -3.5A, I
B
= -350mA
Base-Emitter Saturation Voltage
V
BE(sat)
-1.1 V
I
C
= -3.5A, I
B
= -350mA
Base-Emitter Turn-On Voltage
V
BE(on)
-0.9 V
I
C
= -3.5A, V
CE
= -2V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
90
MHz V
CE
= -10V, I
C
= -50mA, f = 50MHz
Output Capacitance
C
obo
62
pF
V
CB
= -10V, f = 1MHz
Turn-On Time
t
(on)
95
ns
V
CC
= -10V, I
C
= -2A
I
B1
= I
B2
= -40mA
Turn-Off Time
t
(off)
395
ns
Note:
9. Measured under pulsed conditions; pulse width
300μs, duty cycle 2%