Diodes ZXT12N20DX - Manual

ISSUE 1 - MARCH 2000
ZXT12N20DX
SuperSOT4™
DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=20V; R
SAT
= 40m ; I
C
= 3.5A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
•
Extremely Low Equivalent On Resistance
•
Extremely Low Saturation Voltage
•
h
FE
characterised up to 10A
•
I
C
=3.5A Continuous Collector Current
•
MSOP8 package
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Power switches
•
Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
(inches) TAPE WIDTH
(mm) QUANTITY
PER REEL
ZXT12N20DXTA 7 12mm embossed 1000 units
ZXT12N20DXTC 13 12mm embossed 4000 units
DEVICE MARKING
T12N20DX
Top View
1
MSOP8
1
2
3
4
8
7
6
5
E1
E2
B1
B2
C1
C2
C2
C1
C1
E1
B1
C2
E2
B2