Zhcs350, Maximum ratings, Thermal characteristics – Diodes ZHCS350 User Manual
Page 2: Electrical characteristics

ZHCS350
Document number: DS33214 Rev. 3 - 2
2 of 5
June 2012
© Diodes Incorporated
ZHCS350
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Continuous Reverse Voltage
V
R
40 V
Continuous Forward Current
I
F
350 mA
Average Peak Forward Current; D.C. = 50%
I
FAV
510 mA
Non Repetitive Forward Current
t
≤ 100μs
I
FSM
4.2 A
t
≤ 10ms
910 mA
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation, T
A
= 25°C
(Note 5)
P
D
285
mW
(Note 6)
330
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
350
(Note 6)
303
Junction Temperature
T
J
125 °C
Storage Temperature Range
T
STG
-55 to +150
°C
Notes: 5.
For a single device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of 1oz copper in still air conditions.
6. As Note 5, measured at t
≤ 5 secs.
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Reverse Breakdown Voltage
V
(BR)R
40 60 - V
I
R
= 100
μA
Forward Voltage (Note 7)
V
F
- 300
325
mV
I
F
= 30mA
- 335
370
I
F
= 50mA
- 405
460
I
F
= 100mA
- 730
810
I
F
= 350mA
Reverse Current
I
R
- 7 12
μA
V
R
= 30V
Diode Capacitance
C
D
- 3.3 6 pF
f = 1MHz, V
R
= 25V
Reverse Recovery Time
trr
-
1.6
-
ns
Switched from I
F
= 100mA to
I
R
= 100mA
Measured @ I
R
= 10mA
Notes:
7. Measured under pulsed conditions. Pulse width = 300
μS. Duty cycle ≤ 2%.