Sbr660ctlq – Diodes SBR660CTLQ User Manual
Page 3
SBR is a registered trademark of Diodes Incorporated.
SBR660CTLQ
Document number: DS36093 Rev. 1 - 2
3 of 6
October 2012
© Diodes Incorporated
SBR660CTLQ
0
10
20
30
40
50
60
0.1
1
10
100
1,000
10,000
100,000
I,
I
N
S
T
A
N
T
A
N
E
O
U
S
R
EV
E
R
SE
C
U
R
R
E
N
T
(µ
A
)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3 Typical Reverse Characteristics
T = 25°C
A
T = 125°C
A
T = 150°C
A
10
100
1,000
10,000
0.1
1
10
100
V , DC REVERSE VOLTAGE (V)
R
Figure 4 Total Capacitance vs. Reverse Voltage
C
,
T
O
T
AL
C
A
P
A
C
IT
AN
C
E (
p
F)
T
f = 1MHz
25
50
75
100
125
150
175
T , AMBIENT TEMPERATURE (°C)
A
Figure 5 Forward Current Derating Curve
0
1
2
3
4
5
6
I,
A
V
E
R
A
G
E F
O
R
WA
R
D
C
U
R
R
EN
T
(A
)
F(
A
V
)
R
= R
Per Element
θ
θ
JA
JC
R
= R
Total Device
θ
θ
JA
JC
R
= 74°C/W
Per Element
JA
θ
0
25
50
75
100
125
150
0
6
12
18
24
30
36
42
48
54
60
Figure 6 Operating Temperature Derating
V , DC REVERSE VOLTAGE (V)
R
T
,
DERA
T
E
D
AM
BIE
N
T
T
E
M
P
ER
A
T
URE
(
°C)
A
50
25
50
75
100
125
150
P
, A
V
A
L
A
N
C
H
E
P
E
AK
P
U
LS
E
P
O
WE
R
DE
RA
T
ING P
E
RCENT
AGE
(
%
)
AR
M
T , JUNCTION TEMPERATURE (°C)
Figure 7 Pulse Derating Curve
J
0
25
75
175 200
100
125
0
0.01
0.1
1
10
100
10,000
T , PULSE DURATION (µS)
P
Figure 8 Maximum Avalanche Power Curve, Per Element
100,000
P
, MA
X
IM
U
M
AVA
L
A
N
C
H
E
P
O
WE
R
(W
)
AR
M
10,000
1,000
100
1,000