Diodes SDM1L30CSP - Manual (Page 2)

SDM1L30CSP
Document number: DS35649 Rev. 5 - 2
2 of 5
www.diodes.com
March 2014
© Diodes Incorporated
SDM1L30CSP
NEW PROD
UC
T
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage V
RRM
30 V
Average Rectified Output Current I
O
1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
25 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Ambient (Note 5) R
θJA
130 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop V
F
— 0.35 0.40
V
I
F
= 1.0A, T
J
= +25°C
— 0.29 — I
F
= 1.0A, T
J
= +85°C
Leakage Current (Note 6) I
R
— 0.47 1.0 mA V
R
= 30V, T
J
= +25°C
— 17 — mA V
R
= 30V, T
J
= +85°C
Total Capacitance C
T
— 150 — pF V
R
= 5V, f = 1.0 MHz
Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout per http://www.diodes.com/datsheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.