Sdm1l30blp, Maximum ratings, Thermal characteristics – Diodes SDM1L30BLP User Manual
Page 2: Electrical characteristics

SDM1L30BLP
Document number: DS35906 Rev. 6 - 2
2 of 5
November 2013
© Diodes Incorporated
SDM1L30BLP
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
RM
30 V
Average Rectified Output Current
I
O
1.0 mA
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load (Per Diode)
I
FSM
50 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Typical Thermal Resistance Junction to Case (Note 5)
R
θJC
15 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Forward Voltage Drop (Per Diode)
V
F
—
0.21
0.31
—
0.42
V
I
F
= 0.1A, T
J
= +25°C
I
F
= 1.0A, T
J
= +25°C
Leakage Current (Note 6) (Per Diode)
I
R
— — 1.0 mA
V
R
= 30V, T
J
= +25°C
Total Capacitance
C
T
— 90 — pF
V
R
= 30V, f = 1.0MHz,
T
J
= +25°C
Notes:
5. Device mounted on Polymide PCB with 1x recommended pad layout, with minimum recommended pad layout per
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
0.5
1
1.5
2
2.5
3
3.5
I
AVERAGE FORWARD CURRENT (A)
Figure 1 Forward Power Dissipation
F(AV)
P
, P
O
WE
R
D
ISSI
P
A
T
IO
N (
W
)
D
0.001
0.01
0.1
1
10
0
0.1
0.2
0.3
0.4
0.5
0.6
Figure 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
I
, I
N
ST
ANT
A
NE
OUS F
O
RW
ARD
CURRENT
(
A
)
F
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A