Diodes SDM0230CSP - Manual (Page 2)

SDM0230CSP
Document number: DS35649 Rev. 7 - 2
2 of 4
www.diodes.com
May 2013
© Diodes Incorporated
SDM0230CSP
NEW PROD
UC
T
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage V
RRM
30 V
Average Rectified Output Current I
O
0.2 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
4.5 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Ambient (Note 5) R
θJA
261 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop V
F
— 0.30 0.35
V
I
F
= 10mA, T
J
= +25°C
— 0.42 0.50 I
F
= 200mA, T
J
= +25°C
— 0.36 — I
F
= 200mA, T
J
= +125°C
Leakage Current (Note 6) I
R
— — 50 µA V
R
= 30V, T
J
= +25°C
— 1.5 — mA V
R
= 30V, T
J
= +125°C
Junction Capacitance C
J
— 9 — pF V
R
= 15V, T
J
= +25°C , f = 1MHz
Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout per http://www.diodes.com/datsheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
Typical Electrical Characteristics
0 0.1 0.2 0.3 0.4 0.5 0.6
1,000
I,
I
N
S
TAN
TAN
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(m
A
)
F
10
1
0.1
0.01
100
Figure 1 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
I,
I
N
S
TA
N
TA
N
E
O
U
S
R
EV
E
R
SE
C
U
R
R
E
N
T
(µ
A
)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 2 Typical Reverse Characteristics
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
0 5 10 15 20 25 30
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A