Diodes SBR3U60P1 - Manual (Page 2)

SBR3U60P1
Document number: DS35272 Rev. 5 - 2
2 of 5
www.diodes.com
July 2013
© Diodes Incorporated
SBR3U60P1
SBR and POWERDI are registered trademark of Diodes Incorporated.
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
RM
60 V
RMS Reverse Voltage V
R(RMS)
42 V
Average Rectified Output Current (See Figure 1) I
O
3.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
80 A
Repetitive Peak Avalanche Energy (1µs, +25°C) P
ARM
2100 W
Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance Junction to Soldering (Note 5)
Thermal Resistance Junction to Ambient (Note 6) R
θJS
R
θJA
5
175
°C/W
Operating and Storage Temperature Range (Note 7) T
J
, T
STG
-65 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop V
F
- - 0.650 V I
F
= 3.0A, T
J
= +25°C
Leakage Current (Note 7) I
R
- - 100 µA V
R
= 60V, T
J
= +25°C
Notes: 5. Theoretical R
JS
calculated from the top center of the die straight down to the PCB cathode tab solder junction.
6. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
0
0.5
1.0
1.5
2.0
2.5
3.0
0 1 2 3 4 5
Fig. 1 Forward Power Dissipation
I , AVERAGE FORWARD CURRENT (A)
F(AV)
P
, P
O
WE
R
D
ISSI
P
A
T
IO
N (
W
)
D
0.001
0.01
0.1
1
10
0 0.1 0.2 0.3 0.4 0.5 0.6
Fig. 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
I
, IN
ST
ANT
A
NEOUS
F
O
RW
ARD
C
URRENT
(
A
)
F
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A