Diodes SBR2A40BLP - Manual (Page 2)

SBR is a registered trademark of Diodes Incorporated
SBR2A40BLP
Document number: DS35905 Rev. 9 - 2
2 of 5
www.diodes.com
November 2013
© Diodes Incorporated
SBR2A40BLP
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V
RRM
V
RWM
V
RM
40 V
Average Rectified Output Current I
O
2.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load (Per Diode)
I
FSM
70 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Case (Note 5) R
θJC
15 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage (Per Diode) V
F
—
—
0.42
0.50
0.47
V
I
F
= 2.0A, T
J
= +25°C
I
F
= 2.0A, T
J
= +125°C
Reverse Current (Note 6) (Per Diode) I
R
—
—
— 0.1
10
mA
V
R
= 40V, T
J
= +25°C
V
R
= 40V, T
J
= +125°C
Total Capacitance C
T
— 90 — pF
V
R
= 40V, f = 1.0MHz,
T
J
= +25°C
Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout per http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
0.5
1.5
2.5
0 1 2 3 4 5
0
1.0
2.0
I AVERAGE FORWARD CURRENT (A)
Figure 1 Forward Power Dissipation
F(AV)
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
W
)
D
0 0.1 0.2 0.3 0.4 0.5 0.6
I,
IN
S
TA
N
TA
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A
)
F
10
1
0.1
0.0001
0.01
0.001
Figure 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A