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Diodes SBR10U45SP5 User Manual

Page 3

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SBR and POWERDI are registered trademarks of Diodes Incorporated.

SBR10U45SP5

Document number: DS31371 Rev. 8 - 2

3 of 5

www.diodes.com

April 2013

© Diodes Incorporated

SBR10U45SP5




Notes:

8. Device mounted on FR-4 substrate, 2oz copper, with 10cm x 10cm pad layout.

Figure 1 Forward Power Dissipation

0

0.5

1

1.5

2

2.5

3

3.5

4

I

, AVERAGE FORWARD CURRENT (A)

F(AV)

P

,

P

O

WE

R

DISS

IP

A

T

IO

N

(W

)

D

0

5

10

15

4.5

5

Figure 2 Typical Forward Characteristics

0.0001

0.001

0.01

0.1

1

10

100

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

I

,

INST

ANT

A

NE

OUS F

O

R

W

AR

D CURREN

T

(

A

)

F

0

0.15

0.3

0.45

0.6

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

Figure 3 Typical Reverse Characteristics

V , INSTANTANEOUS REVERSE VOLTAGE (V)

R

I

, I

N

ST

ANT

A

NE

O

U

S REV

E

R

SE

CURRENT

(

µA)

R

0.01

0.1

1

10

100

1,000

10,000

100,000

0

5

10

15

20

25

45

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

30

35

40

C

, T

O

T

A

L

CA

P

A

CI

T

A

NCE

(

p

F

)

T

1

10

100

1,000

10,000

100,000

Figure 4 Total Capacitance vs. Reverse Voltage

0.1

1

10

100

V , DC REVERSE VOLTAGE (V)

R

f = 1MHz

Figure 5 Forward Current Derating Curve

0

2

4

6

8

10

12

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

A

I

,

A

V

ERAGE

F

O

R

W

ARD CURR

ENT

(

A

)

F

Note 5

175

Note 8

Based on Lead Temp (T )

L

Figure 6 Maximum Avalanche Power

1,000

10,000

100,000

1

10

100

1,000

10,000

T , PULSE DURATION (µS)

P

P

, M

AXIM

U

M

A

V

AL

ANCHE

POW

E

R (

W

)

M