Diodes SBR10U45SP5 User Manual
Page 3
SBR and POWERDI are registered trademarks of Diodes Incorporated.
SBR10U45SP5
Document number: DS31371 Rev. 8 - 2
3 of 5
April 2013
© Diodes Incorporated
SBR10U45SP5
Notes:
8. Device mounted on FR-4 substrate, 2oz copper, with 10cm x 10cm pad layout.
Figure 1 Forward Power Dissipation
0
0.5
1
1.5
2
2.5
3
3.5
4
I
, AVERAGE FORWARD CURRENT (A)
F(AV)
P
,
P
O
WE
R
DISS
IP
A
T
IO
N
(W
)
D
0
5
10
15
4.5
5
Figure 2 Typical Forward Characteristics
0.0001
0.001
0.01
0.1
1
10
100
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
I
,
INST
ANT
A
NE
OUS F
O
R
W
AR
D CURREN
T
(
A
)
F
0
0.15
0.3
0.45
0.6
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Figure 3 Typical Reverse Characteristics
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
I
, I
N
ST
ANT
A
NE
O
U
S REV
E
R
SE
CURRENT
(
µA)
R
0.01
0.1
1
10
100
1,000
10,000
100,000
0
5
10
15
20
25
45
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
30
35
40
C
, T
O
T
A
L
CA
P
A
CI
T
A
NCE
(
p
F
)
T
1
10
100
1,000
10,000
100,000
Figure 4 Total Capacitance vs. Reverse Voltage
0.1
1
10
100
V , DC REVERSE VOLTAGE (V)
R
f = 1MHz
Figure 5 Forward Current Derating Curve
0
2
4
6
8
10
12
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
I
,
A
V
ERAGE
F
O
R
W
ARD CURR
ENT
(
A
)
F
Note 5
175
Note 8
Based on Lead Temp (T )
L
Figure 6 Maximum Avalanche Power
1,000
10,000
100,000
1
10
100
1,000
10,000
T , PULSE DURATION (µS)
P
P
, M
AXIM
U
M
A
V
AL
ANCHE
POW
E
R (
W
)
M