Diodes SBR10U200P5 - Manual (Page 2)

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SBR10U200P5
Document number: DS31234 Rev. 8 - 2
2 of 5
www.diodes.com
October 2012
© Diodes Incorporated
SBR10U200P5
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage V RRM
V
RWM
V
RM
200 V
Average Rectified Output Current (See Figure 1) I
O
10 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
180 A
Repetitive Peak Avalanche Power (1µs, +25°C) P
ARM
3,000 W
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance Junction to Ambient (Note 5) R θJA 77 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +175 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop V
F
—
—
— 0.75
0.62
0.83 0.82
0.67
0.88
V
I
F
= 5A, T
J
= +25°C
I
F
= 5A, T
J
= +125°C
I
F
= 10A, T
J
= +25°C
Leakage Current (Note 6) I R
—
—
0.18
0.1
10
mA
V R = 200V, T J = +25°C
V
R
= 200V, T
J
= +125°C
Notes: 5. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
Fig. 1 Forward Power Dissipation
0
0.5
1
1.5
2
2.5
0 1 2 3 4 5
I , AVERAGE FORWARD CURRENT (A)
F(AV)
P
,
P
O
WE
R
DI
SSI
P
A
T
IO
N
(W
)
D
Fig. 2 Typical Forward Characteristics
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
I
, IN
S
T
A
NT
A
NEOUS
F
O
RW
ARD
C
URRENT
(
A
)
F
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A