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Rainbow Electronics MAX15046B User Manual

Page 14

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40V, High-Performance, Synchronous

Buck Controller

MAX15046

14 _____________________________________________________________________________________

Setting the Switching Frequency

An external resistor connecting RT to GND sets the
switching frequency (f

SW

). The relationship between f

SW

and R

RT

is:

9

RT

-7

2

SW

SW

17.3 10

R

f

(1x10 ) x (f

)

×

=

+

where f

SW

is in kHz and R

RT

is in kI. For example, a

300kHz switching frequency is set with R

RT

= 49.9kI.

Higher frequencies allow designs with lower inductor
values and less output capacitance. Peak currents and
I

2

R losses are lower at higher switching frequencies, but

core losses, gate-charge currents, and switching losses
increase.

Inductor Selection

Three key inductor parameters must be specified for
operation with the MAX15046: inductance value (L),
inductor saturation current (I

SAT

), and DC resistance

(R

DC

). To determine the inductance, select the ratio of

inductor peak-to-peak AC current to DC average cur-
rent (LIR) first. For LIR values that are too high, the RMS
currents are high, and therefore I

2

R losses are high.

Use high-valued inductors to achieve low LIR values.
Typically, inductor resistance is proportional to induc-
tance for a given package type, which again makes I

2

R

losses high for very low LIR values. A good compromise
between size and loss is a 30% peak-to-peak ripple cur-
rent to average-current ratio (LIR = 0.3). The switching
frequency, input voltage, output voltage, and selected
LIR determine the inductor value as follows:

OUT IN

OUT

IN

SW

OUT

V

(V - V

)

L

V

f

I

LIR

=

Ч

Ч

Ч

where V

IN

, V

OUT

, and I

OUT

are typical values. The

switching frequency is set by R

T

(see Setting the

Switching Frequency section). The exact inductor value
is not critical and can be adjusted to make trade-offs
among size, cost, and efficiency. Lower inductor val-
ues minimize size and cost, but also improve transient
response and reduce efficiency due to higher peak cur-
rents. On the other hand, higher inductance increases
efficiency by reducing the RMS current.
Find a low-loss inductor with the lowest possible DC
resistance that fits in the allotted dimensions. The

saturation current rating (I

SAT

) must be high enough to

ensure that saturation cannot occur below the maximum
current-limit value (I

CL(MAX)

), given the tolerance of the

on-resistance of the low-side MOSFET and of the LIM
reference current (I

LIM

). Combining these conditions,

select an inductor with a saturation current (I

SAT

) of:

×

SAT

CL(TYP)

I

1.35 I

where I

CL(TYP)

is the typical current-limit set point. The

factor 1.35 includes R

DS(ON)

variation of 25% and 10%

for the LIM reference current error. A variety of inductors
from different manufacturers are available to meet this
requirement (for example, Vishay IHLP-4040DZ-1-5 and
other inductors from the same series).

Setting the Valley Current Limit

The minimum current-limit threshold must be high enough
to support the maximum expected load current with the
worst-case low-side MOSFET on-resistance value as the
R

DS(ON)

of the low-side MOSFET is used as the current-

sense element. The inductor’s valley current occurs at
I

LOAD(MAX)

minus one half of the ripple current. The

minimum value of the current-limit threshold voltage
(V

ITH

) must be higher than the voltage on the low-side

MOSFET during the ripple-current valley,

ITH

DS(ON,MAX)

LOAD(MAX)

LIR

V

R

I

1

2

>

Ч

Ч 

where R

DS(ON,MAX)

in I is the maximum on-resistance

of the low-side MOSFET at maximum load current
I

LOAD(MAX)

and is calculated from the following equation:

DS(ON,MAX)

DS(ON)

MOSFET

MAX

AMB

R

R

[1 TC

(T

- T

)]

=

Ч +

Ч

where R

DS(ON)

(in I is the on-resistance of the low-

side MOSFET at ambient temperature T

AMB

(in degrees

Celsius), TC

MOSFET

is the temperature coefficient of

the low-side MOSFET in ppm/NC, and T

MAX

(in degrees

Celsius) is the temperature at maximum load current
I

LOAD(MAX).

Obtain the R

DS(ON)

and TC

MOSFET

from the

MOSFET data sheet.