Vishay semiconductors – C&H Technology VS-100MT060WDF User Manual
Page 7
VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
Revision: 01-Mar-12
6
Document Number: 93412
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Fig. 13 - Typical IGBT Energy Loss vs. I
C
T
J
= 125 °C, V
CC
= 360 V, V
GE
= 15 V, L = 500 μH, R
g
= 5
Fig. 14 - Typical IGBT Energy Loss vs. R
g
, T
J
= 125 °C
I
C
= 100 A, V
CC
= 360 V, V
GE
= 15 V, L = 500 μH, R
g
= 5
Fig. 15 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, V
DD
= 360 V, V
GE
= 15 V, L = 500 μH, R
g
= 5
Fig. 16 - Typical IGBT Switching Time vs. R
g
, T
J
= 125 °C
I
C
= 100 A, V
CE
= 360 V, V
GE
= 15 V, L = 500 μH
Fig. 17 - Typical t
rr
Antiparallel Diode vs. dI
F
/dt
V
rr
= 200 V, I
F
= 60 A
Fig. 18 - Typical I
rr
Antiparallel Diode vs. dI
F
/dt
V
rr
= 200 V, I
F
= 60 A
Energy (mJ)
I
C
(A)
0
20
60
80
100
40
120
0
93412_13
2.0
1.2
1.6
0.8
0.4
E
on
E
off
Energy (mJ)
R
g
(
Ω)
0
10
20
30
40
50
0
93412_14
5
3
4
2
1
E
off
E
on
S
witching Time (ns)
I
C
(A)
0
20
80
40
100
60
120
10
93412_15
1000
100
t
d(off)
t
d(on)
t
f
t
r
S
witching Time (ns)
R
g
(
Ω)
0
10
30
40
20
50
10
93412_16
1000
100
t
d(off)
t
d(on)
t
f
t
r
t
rr
(ns)
dI
F
/dt (A/μs)
100
200
300
400
93412_17
500
100
150
250
200
T
J
= 25 °C
T
J
= 125 °C
I
rr
(A)
dI
F
/dt (A/μs)
100
200
300
400
93412_18
500
0
25
20
10
15
5
T
J
= 25 °C
T
J
= 125 °C