Datasheet, Primary mtp igbt power module, Vishay semiconductors – C&H Technology VS-100MT060WDF User Manual
Page 2
VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
Revision: 01-Mar-12
1
Document Number: 93412
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Primary MTP IGBT Power Module
FEATURES
• Buck PFC stage with warp 2 IGBT and FRED Pt
®
hyperfast diode
• Integrated thermistor
• Isolated baseplate
• Compliant to RoHS Directive 2011/65/EU
• Very low stray inductance design for high speed operation
• Designed and qualified for industrial level
BENEFITS
• Lower conduction losses and switching losses
• Higher switching frequency up to 150 kHz
• Optimized for welding, UPS, and SMPS applications
• PCB solderable terminals
• Direct mounting to heatsink
PRODUCT SUMMARY
FRED Pt
®
AP DIODE, T
J
= 150 °C
V
RRM
600 V
I
F(DC)
at 80 °C
11 A
V
F
at 25 °C at 60 A
2.08 V
IGBT, T
J
= 150 °C
V
CES
600 V
V
CE(ON)
at 25 °C at 60 A
1.98 V
I
C
at 80°C
83 A
FRED Pt
®
CHOPPER DIODE, T
J
= 150 °C
V
R
600 V
I
F(DC)
at 80 °C
17 A
V
F
at 25 °C at 60 A
2.06 V
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
FRED Pt
Antiparallel
Diode
Repetitive peak reverse voltage
V
RRM
600
V
Maximum continuous forward current
T
J
= 150 °C maximum
I
F(DC)
T
C
= 25 °C
17
A
T
C
= 80 °C
11
Maximum power dissipation
P
D
T
C
= 25 °C
25
W
IGBT
Collector to emitter voltage
V
CES
T
J
= 25 °C
600
V
Gate to emitter voltage
V
GE
I
GES
max. ± 250 ns
± 20
V
Maximum continuous collector current
at V
GE
= 15 V, T
J
= 150 °C maximum
I
C
T
C
= 25 °C
121
A
T
C
= 80 °C
83
Clamped inductive load current
I
LM
300
Maximum power dissipation
P
D
T
C
= 25 °C
462
W
FRED Pt
Chopper Diode
Repetitive peak reverse voltage
V
RRM
600
V
Maximum continuous forward current
T
J
= 150 °C maximum
I
F
T
C
= 25 °C
26
A
T
C
= 80 °C
17
Maximum power dissipation
P
D
T
C
= 25 °C
56
W
Maximum operating junction temperature
T
J
150
°C
Storage temperature range
T
Stg
- 40 to + 150
Isolation voltage
V
ISOL
V
RMS
t = 1 s, T
J
= 25 °C
3500
V