Vishay semiconductors – C&H Technology VS-100MT060WDF User Manual
Page 6
VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
Revision: 01-Mar-12
5
Document Number: 93412
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Fig. 7 - Typical IGBT Gate Thresold Voltage
Fig. 8 - Typical Diode Forward Voltage Characteristics of
Antiparallel Diode, t
p
= 500 μs
Fig. 9 - Maximum Continuous Forward Current vs.
Case Temperature Antiparallel Diode
Fig. 10 - Typical PFC Diode Forward Voltage
Fig. 11 - Maximum Continuous Forward Current vs.
Case Temperature PFC Diode
Fig. 12 - Typical FRED Pt Chopper Diode Reverse Current vs.
Reverse Voltage
V
geth
(V)
I
C
(mA)
0.2
1.0
0.3
0.4
0.6
0.8
0.5
0.7
0.9
3.0
3.5
4.0
4.5
93412_07
5.0
T
J
= 125 °C
T
J
= 25 °C
I
F
- Instantaneous Forwar
d
Current (A)
V
F
- Anode to Cathode
Forward Voltage Drop (V)
0.5
1.0
1.5
2.0
2.5
3.0
0
60
100
90
40
80
20
50
30
10
70
93412_08
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
93412_09
I
F
-
Continuous
Forward Current (A)
Allowable
Case
Temperature
(°C)
0
20
40
60
80
100
120
140
160
0
5
10
15
20
I
F
- Instantaneous Forwar
d
Drop (A)
V
F
- Forward Voltage Drop (V)
0.25
0.75
1.25
2.25
1.75
2.75
3.75
3.25
0
90
30
50
70
40
10
20
60
80
100
93412_10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
93412_11
I
F
-
Continuous
Forward Current (A)
Allowable
Case
Temperature
(°C)
0
20
40
60
80
100
120
140
160
0
5
10
15
20
25
30
35
40
I
R
(mA)
V
R
(V)
100
200
300
400
500
600
0.00001
0.001
0.0001
0.01
0.1
93412_12
T
J
= 150 °C
T
J
= 25 °C