C&H Technology VS-100MT060WDF - Manual (Page 3)

VS-100MT060WDF
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Vishay Semiconductors
Revision: 01-Mar-12 2 Document Number: 93412
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ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
AP Diode
Blocking voltage BV
RRM
0.5 mA 600 - - V
Forward voltage drop V
FM
I
F
= 60 A - 2.08 2.43
V
I
F
= 60 A, T
J
= 125 °C - 2.05 2.3
IGBT
Collector to emitter
breakdown voltage
BV
CES
V
GE
= 0 V, I
C
= 0.5 mA 600 - - V
Temperature coefficient of
breakdown voltage
V
BR(CES)
/ T
J
I
C
= 0.5 mA (25 °C to 125 °C) - 0.6 - V/°C
Collector to emitter voltage V
CE(ON)
V
GE
15 V, I
C
= 60 A - 1.93 2.29
V
V
GE
= 15 V, l
C
= 60 A, T
J
= 125 °C - 2.36 2.80
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 500 μA 2.9 - 6.0 V
Collector to emitter
leakage current
I
CES
V
GE
= 0 V, V
CE
= 600 V - - 100 μA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C - - 2.0 mA
Gate to emitter leakage I
GES
V
GE
= ± 20 V - - ± 100 nA
FRED Pt
Chopper
Diode
Forward voltage drop V
FM
I
F
= 60 A - 2.06 2.53
V I
F
= 60 A, T
J
= 125 °C - 1.83 2.26
Blocking voltage BV
RM
0.5 mA 600 - -
Reverse leakage current I
RM
V
RRM
= 600 V - - 75 μA
V
RRM
= 600 V, T
J
= 125 °C - - 0.5 mA
RECOVERY PARAMETER
AP Diode
Peak reverse recovery current I
rr I
F
= 60 A
dI/dt = 200 A/μs
V
R
= 200 V
- 67 11 A
Reverse recovery time t
rr
- 120 160 ns
Reverse recovery charge Q
rr
- 620 850 nC
FRED Pt
Chopper
Diode
Peak reverse recovery current I
rr I
F
= 60 A
dI/dt = 200 A/μs
V
R
= 200 V
- 4.5 6.0 A
Reverse recovery time t
rr
- 67 85 ns
Reverse recovery charge Q
rr
- 130 250 nC
Peak reverse recovery current I
rr I
F
= 60 A
dI/dt = 200 A/μs
V
R
= 200 V, T
J
= 125 °C
- 9.5 12.0 A
Reverse recovery time t
rr
- 128 165 ns
Reverse recovery charge Q
rr
- 601 900 nC