C&H Technology CM100MXA-24S - Manual (Page 4)

CM100MXA-24S
NX-S Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
100 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
3 05/11 Rev. 2
Absolute Maximum Ratings, T
j
= 25°C unless otherwise specified
Module
Characteristics Symbol Rating Units
Maximum Case Temperature *2 T
C(max)
125 °C
Operating Junction Temperature T
j(op)
-40 to +150 °C
Storage Temperature T
stg
-40 to +125 °C
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) V
ISO
2500 Volts
Electrical Characteristics, T
j
= 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V — — 1 mA
Gate-Emitter Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V — — 0.5 µA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 10mA, V
CE
= 10V 5.4 6.0 6.6 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 100A, V
GE
= 15V, T
j
= 25°C *5 — 1.80 2.25 Volts
(Terminal) I
C
= 100A, V
GE
= 15V, T
j
= 125°C *5 — 2.00 — Volts
I
C
= 100A, V
GE
= 15V, T
j
= 150°C *5 — 2.05 — Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 100A, V
GE
= 15V, T
j
= 25°C *5 — 1.70 2.15 Volts
(Chip) I
C
= 100A, V
GE
= 15V, T
j
= 125°C *5 — 1.90 — Volts
I
C
= 100A, V
GE
= 15V, T
j
= 150°C *5 — 1.95 — Volts
Input Capacitance C
ies
— — 10 nF
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V — — 2.0 nF
Reverse Transfer Capacitance C
res
— — 0.17 nF
Gate Charge Q
G
V
CC
= 600V, I
C
= 100A, V
GE
= 15V — 233 — nC
Turn-on Delay Time t
d(on)
— — 300 ns
Rise Time t
r
V
CC
= 600V, I
C
= 100A, V
GE
= ±15V, — — 200 ns
Turn-off Delay Time t
d(off)
R
G
= 6.2Ω, Inductive Load — — 600 ns
Fall Time t
f
— — 300 ns
Emitter-Collector Voltage V
EC
*1 I
E
= 100A, V
GE
= 0V, T
j
= 25°C *5 — 1.80 2.25 Volts
(Terminal) I
E
= 100A, V
GE
= 0V, T
j
= 125°C *5 — 1.80 — Volts
I
E
= 100A, V
GE
= 0V, T
j
= 150°C *5 — 1.80 — Volts
Emitter-Collector Voltage V
EC
*1 I
E
= 100A, V
GE
= 0V, T
j
= 25°C *5 — 1.70 2.15 Volts
(Chip) I
E
= 100A, V
GE
= 0V, T
j
= 125°C *5 — 1.70 — Volts
I
E
= 100A, V
GE
= 0V, T
j
= 150°C *5 — 1.70 — Volts
Reverse Recovery Time t
rr
*1 V
CC
= 600V, I
E
= 100A, V
GE
= ±15V — — 300 ns
Reverse Recovery Charge Q
rr
*1 R
G
= 6.2Ω, Inductive Load — 5.3 — µC
Internal Lead Resistance R
CC' + EE'
Main Terminals-Chip, — — 3.5 mΩ
Per Switch, T
C
= 25°C *2
Internal Gate Resistance r
g
Per Switch — 0 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Case temperature (T
C ) and heatsink temperature (T s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure on page 1 for chip location. The heatsink thermal resistance should be measured just under the chips.
*3 Junction temperature (T j ) should not increase beyond maximum junction temperature (T j(max) ) rating.
*4 Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.