C&H Technology GA100NA60UP - Manual (Page 8)

Document Number: 94543 For technical questions, contact: [email protected] www.vishay.com
Revision: 13-May-08 7
GA100NA60UP
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 50 A
Vishay High Power Products
Fig. 17d - Test Waveforms for Circuit of Fig. 17a,
Defining E
rec
, t
rr
, Q
rr
, I
rr
Fig. 17e - Macro Waveforms for Figure 17a's Test Circuit
Fig. 18 - Clamped Inductive Load Test Circuit
Fig. 19 - Pulsed Collector Current Test Circuit
Diode reverse
recovery energy
tx
∫ E
rec
=
t4
V
d
I
C
dt
t3
t4 t3
Diode recovery
waveforms
I
C
V
pk
10 % V
CC
I
rr
10 % I
rr
V
CC
t
rr ∫ Q
rr
=
t
rr
I
C
dt
tx
V
G
Gate signal
device under test
Current D.U.T.
Voltage in D.U.T.
Current in D1
t0 t1 t2
50 V
6000 µF
100 V
1000 V V
C
*
L D.U.T.
R
L
=
480 V
4 x I
C
at 25 °C
0 - 480 V