C&H Technology GA100NA60UP - Manual (Page 4)

Document Number: 94543 For technical questions, contact: [email protected] www.vishay.com
Revision: 13-May-08 3
GA100NA60UP
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 50 A
Vishay High Power Products
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Maximum Collector Current vs.
Case Temperature
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction to Case
1
10
100
1000
0.0 1.0 2.0 3.0 4.0 5.0
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
? V = 15V
20μs PULSE WIDTH GE
? T = 25 C
J
°
? T = 150 C
J
°
1
10
100
1000
0.0 1.0 2.0 3.0 4.0 5.0
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20μs PULSE WIDTH GE
T = 25 C
J
°
T = 150 C
J
°
1
10
100
1000
5.0 6.0 7.0 8.0 9.0
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5μs PULSE WIDTH CC
? T = 25 C
J
°
T = 150 C J
°
25 50 75 100 125 150
0
20
40
60
80
100
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
°
CE
? V = 15V
80 us PULSE WIDTH GE
? I = A 100
C
? I = A 50
C
? I = A 25 C
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)