C&H Technology GA100NA60UP - Manual (Page 5)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94543
4 Revision: 13-May-08
GA100NA60UP
Vishay High Power Products Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 50 A
Fig. 6 - Typical Capacitance vs.
Collector to Emitter Voltage
Fig. 7 - Typical Gate Charge vs.
Gate to Emitter Voltage
Fig. 8 - Typical Switching Losses vs.
Gate Resistance
Fig. 9 - Typical Switching Losses vs.
Junction Temperature
Fig. 10 - Typical Switching Losses vs.
Collector to Emitter Current
Fig. 11 - Turn-Off SOA
1 10 100
0
2000
4000
6000
8000
10000
12000
14000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C =
=
=
= 0V,
C
C
C f = 1MHz
+ C
+ C
C SHORTED
GE
ies
ge gc , ce
res gc
oes ce gc
? Cies
Coes
Cres
0 100 200 300 400 500
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V = 400V
I = 50A
CC
C
0 10 20 30 40 50
RG, Gate Resistance (Ω)
2
4
6
8
10
)
J
m(
s
e
s
s
o
L
g
ni
h
cti
w
S l
at
o
T
VCC= 480V
VGE = 15V
TJ = 25°C
I C = 60A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
0.1
1
10
100
)
J
m(
s
e
s
s
o
L
g
ni
h
cti
w
S l
at
o
T
RG = 5.0Ω
VGE = 15V
VCC= 480V
IC = 120A
IC = 60A
IC = 30A
20 40 60 80 100
IC, Collector Current (A)
0
2
4
6
8
10
12
)
J
m(
s
e
s
s
o
L
g
ni
h
cti
w
S l
at
o
T
RG = 5.0Ω
TJ = 150°C
VGE = 15V
VCC= 480V
1
10
100
1000
1 10 100 1000
V = 20V
T = 125 C
GE
J
o
? SAFE OPERATING AREA
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C