Vishay high power products, Map block power module single thyristor, 500 a, On-state conduction – C&H Technology VSKS500-08PbF User Manual
Page 3: Switching, Blocking
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Document Number: 93160
2
Revision: 14-Dec-09
VSKS500-08PbF
Vishay High Power Products
MAP Block Power Module
Single Thyristor, 500 A
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° conduction half sine wave
500
A
76
°C
Maximum RMS on-state current
I
T(RMS)
As AC switch
785
A
Maximum peak, one-cycle
on-state, non-repetitive
surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sine half wave,
initial T
J
=
T
J
maximum
16 646
t = 8.3 ms
17 430
t = 10 ms
100 % V
RRM
reapplied
14 000
t = 8.3 ms
14 658
Maximum I
2
t for fusing
I
2
t
t = 10 ms
No voltage
reapplied
1385
kA
2
s
t = 8.3 ms
1265
t = 10 ms
100 % V
RRM
reapplied
894
t = 8.3 ms
894
Maximum I
2
√t for fusing
I
2
√t
t = 0.1 ms to 10 ms, no voltage reapplied
1385
kA
2
√s
Low level value of threshold voltage
V
T(TO)1
(16.7 % x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
maximum
0.6839
V
High level value of threshold voltage
V
T(TO)2
(I >
π x I
T(AV)
), T
J
maximum
0.7598
Low level value on-state
slope resistance
r
t1
(16.7 % x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
maximum
0.393
m
Ω
High level value on-state
slope resistance
r
t2
(I >
π x I
T(AV)
), T
J
maximum
0.389
Maximum on-state voltage drop
V
TM
T
J
= 25 °C, 500 A I
pk
1.1
V
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Typical delay time
t
d
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C, I
t
= 400 A
1.3
μs
Typical turn-off time
t
q
I
TM
= 750 A, T
J
= T
J
maximum, dI/dt = 60 A/μs, V
R
= 50 V
dV/dt = 20 V/μs, Gate 0 V 100
Ω, t
p
= 500 μs
200
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
T
J
= T
J
maximum linear to 67 % rated V
DRM
500
V/μs
Maximum peak reverse and off-state
leakage current
I
DRM
,
I
RRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
80
mA
RMS insulation voltage
V
INS
50 Hz, circuit to base, all terminal shorted, t = 1 s
3000
V