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Vishay semiconductors, Circuit configuration – C&H Technology VS-GT50TP120N User Manual

Page 6

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VS-GT50TP120N

www.vishay.com

Vishay Semiconductors

Revision: 17-May-13

5

Document Number: 94824

For technical questions within your region:

[email protected]

,

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Fig. 9 - Diode Switching Loss vs. R

G

Fig. 10 - Diode Transient Thermal Impedance

CIRCUIT CONFIGURATION

E (mJ)

0

0.5

1

1.5

2

2.5

3

0

10

20

30

40

50

60

V

GE

= - 15 V

T

J

=

125 °C

I

F

= 50 A

V

CC

= 600 V

E

rec

R

g

(

Ω)

t (s)

Z

thJC

(K/W)

Diode

10

0

10

-1

10

-2

10

0

10

1

10

-1

10

-2

10

-3

1

6
7

3

2

5
4

LINKS TO RELATED DOCUMENTS

Dimensions

www.vishay.com/doc?95524