Vishay semiconductors – C&H Technology VS-GT50TP120N User Manual
Page 2
VS-GT50TP120N
www.vishay.com
Vishay Semiconductors
Revision: 17-May-13
1
Document Number: 94824
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Molding Type Module IGBT,
2 in 1 Package, 1200 V, 50 A
FEATURES
• Low V
CE(on)
trench IGBT technology
• Low switching losses
• 10 μs short circuit capability
• V
CE(on)
with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• UPS (Uninterruptable Power Supply)
• Electronic welders
• Switching mode power supplies
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
CES
1200 V
I
C
at T
C
= 80 °C
50 A
V
CE(on)
(typical)
at I
C
= 50 A, 25 °C
1.65 V
Package
INT-A-PAK
Circuit
Half Bridge
INT-A-PAK
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
1200
V
Gate to emitter voltage
V
GES
± 20
Collector current
I
C
T
C
= 25 °C
100
A
T
C
= 80 °C
50
Pulsed collector current
I
CM
(1)
t
p
= 1 ms
100
Diode continuous forward current
I
F
50
Diode maximum forward current
I
FM
(1)
100
Maximum power dissipation
P
D
T
J
= 175 °C
405
W
RMS isolation voltage
V
ISOL
f = 50 Hz, t = 1 min
2500
V