Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GT50TP120N User Manual
Page 4
VS-GT50TP120N
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Vishay Semiconductors
Revision: 17-May-13
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Document Number: 94824
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
G
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction temperature
T
J
-
-
175
°C
Storage temperature range
T
Stg
- 40
-
125
°C
Junction to case
IGBT
R
thJC
-
-
0.37
K/W
Diode
-
-
0.49
Case to sink (Conductive grease applied)
R
thCS
-
0.05
-
Mounting torque
Power terminal screw: M5
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 5.0
Weight
Weight of module
-
150
-
g
0
10
20
30
40
50
60
70
80
90
100
25 °C
175 °C
V
CE
(V)
I
C
(A)
0
1
2
3
4
V
GE
= 15 V
0
2
6
4
8
10
12
V
GE
(V)
I
C
(A)
V
CE
= 50 V
0
10
20
30
40
50
60
70
80
90
100
175 °C
25 °C
0
25
75
50
100
I
C
(A)
E (mJ)
0
2
4
6
8
10
12
14
16
18
20
V
GE
= ± 15 V
T
J
=
125 °C
R
g
=15
Ω
V
CC
= 600 V
E
off
E
on
R
g
(
Ω)
E
(mJ)
0
10
30
20
40
50
60
0
8
4
2
6
10
12
14
16
18
20
E
on
E
off
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 50 A
V
CC
= 600 V