C&H Technology VS-GT50TP120N - Manual (Page 3)

VS-GT50TP120N
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Vishay Semiconductors
Revision: 17-May-13 2 Document Number: 94824
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IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
T
J
= 25 °C 1200 - -
V Collector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 50 A, T
J
= 25 °C - 1.90 2.35
V
GE
= 15 V, I
C
= 50 A, T
J
= 175 °C - 2.50 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 1.4 mA, T
J
= 25 °C 5.0 5.5 7.5
Collector cut-off current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 5.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 50 A, R
g
= 15
,
V
GE
= ± 15 V, T
J
= 25 °C
- 148 -
ns
Rise time t
r
- 84 -
Turn-off delay time t
d(off)
- 245 -
Fall time t
f
- 251 -
Turn-on switching loss E
on
- 5.51 -
mJ
Turn-off switching loss E
off
- 2.70 -
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 50 A, R
g
= 15 ,
V
GE
= ± 15 V, T
J
= 125 °C
- 263 -
ns
Rise time t
r
- 81 -
Turn-off delay time t
d(off)
- 256 -
Fall time t
f
- 292 -
Turn-on switching loss E
on
- 6.63 -
mJ
Turn-off switching loss E
off
- 3.25 -
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 30 V, f = 1.0 MHz
- 6.24 -
nF Output capacitance C
oes
- 0.23 -
Reverse transfer capacitance C
res
- 0.15 -
SC data I
SC
t
p
 10 μs, V
GE
= 15 V, T
J
= 125 °C,

V
CC
= 600 V, V
CEM
 1200 V - 450 - A
Stray inductance L
CE
- - 30 nH
Module lead resistance, terminal to chip R
CC’+EE’
- 0.75 - m

DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Forward voltage V
F
I
F
= 50 A
T
J
= 25 °C - 1.85 2.25
V
T
J
= 125 °C - 1.95 -
Reverse recovery charge Q
rr
I
F
= 50 A, V
R
= 600 V,

dI
F
/dt = - 654 A/μs

V
GE
= - 15 V
T
J
= 25 °C - 3.1 -
μC
T
J
= 125 °C - 6.1 -
Peak reverse recovery current I
rr
T
J
= 25 °C - 24 -
A
T
J
= 125 °C - 31 -
Reverse recovery energy E
rec
T
J
= 25 °C - 0.98 -
mJ
T
J
= 125 °C - 2.06 -