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Vishay semiconductor italy – C&H Technology UFL200FA60P User Manual

Page 4

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UFL200FA60P

Vishay Semiconductor Italy

www.vishay.com

3

Document Number: I27322
Revision 30-Oct-07

Fig. 1 - Typical Forward Voltage Drop Characteristics

(per diode)

Fig. 3 - Typical Junction Capacitance

Vs. Reverse Voltage

Forward Voltage Drop - V

F

(V)

Instantaneous Forward Current - I

F

(A)

Reverse Voltage - V

R

(V)

Reverse Voltage - V

R

(V)

Junction Capacitance - C

T

(pF)

Fig. 4 - Max. Thermal Impedance Z

thJC

Characteristics (per diode)

t

1

, Rectangular Pulse Duration (Seconds)

Thermal Impedance Z

thJC

(°C/W)

Reverse Current - I

R

A)

0.0

0.5

1.0

1.5

2.0

2.5

1

10

100

1000

Tj = 25°C

Tj = 125°C

Tj = 175°C

100

200

300

400

500

600

0.001

0.01

0.1

1

10

100

1000

25°C

175°C

125C

10

100

1000

10000

10

100

1000

T = 25˚C

J

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

Single Pulse

(Thermal Resistance)

2

t

1

t

P

DM

Notes:

1. Duty factor D = t1/ t2

2. Peak Tj = Pdm x ZthJC + Tc