Vishay semiconductor italy – C&H Technology UFL200FA60P User Manual
Page 3

UFL200FA60P
Vishay Semiconductor Italy
www.vishay.com
2
Document Number: I27322
Revision 30-Oct-07
R
thJC
Junction to Case, Single Leg Conducting
0.5
°C/W
Both Leg Conducting
0.25
K/W
R
thCS
Case to Heat Sink, Flat, Greased Surface
0.05
Wt
Weight
30
g
T
Mounting Torque
1.3
(N•m)
PARAMETERS
MIN
TYP
MAX
Units
t
rr
Reverse Recovery Time
102
141
ns
T
J
= 25°C
-
210
293
T
J
= 125°C
I
RRM
Peak Recovery Current
-
9
12
A
T
J
= 25°C
-
21
25
T
J
= 125°C
Q
rr
Reverse Recovery Charge
-
443
744
nC
T
J
= 25°C
-
2086 3355
T
J
= 125°C
I
F
= 50A
V
R
= 200V
di
F
/dt = 200A/μs
DYNAMIC RECOVERY CHARACTERISTICS @ T
J
= 25°C (UNLESS OTHERWISE SPECIFIED)
THERMAL-MECHANICAL SPECIFICATIONS
V
BR
Cathode Anode
600
-
-
V
I
R
= 100μA
Breakdown Voltage
V
FM
Forward Voltage
-
1.28 1.44
V
I
F
= 100A
-
1.48 1.66
V
I
F
= 200A
-
1.13 1.24
V
I
F
= 100A, T
J
= 125°C
-
1.37 1.55
V
I
F
= 200A
I
RM
Reverse Leakage Current
-
5
100
μA
V
R
= V
R
Rated
-
0.2
1
mA
T
J
= 175°C, V
R
= V
R
Rated
C
T
Junction Capacitance
-
80
-
pF
V
R
= 600V
PARAMETERS
MIN TYP MAX UNITS TETS CONDITIONS
ELECTRICAL CHARACTERISTICS @ T
J
= 25°C (UNLESS OTHERWISE SPECIFIED)
PARAMETERS
MIN TYP MAX UNITS TETS CONDITIONS