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Vishay semiconductor italy – C&H Technology UFL200FA60P User Manual

Page 3

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UFL200FA60P

Vishay Semiconductor Italy

www.vishay.com

2

Document Number: I27322

Revision 30-Oct-07

R

thJC

Junction to Case, Single Leg Conducting

0.5

°C/W

Both Leg Conducting

0.25

K/W

R

thCS

Case to Heat Sink, Flat, Greased Surface

0.05

Wt

Weight

30

g

T

Mounting Torque

1.3

(Nm)

PARAMETERS

MIN

TYP

MAX

Units

t

rr

Reverse Recovery Time

102

141

ns

T

J

= 25°C

-

210

293

T

J

= 125°C

I

RRM

Peak Recovery Current

-

9

12

A

T

J

= 25°C

-

21

25

T

J

= 125°C

Q

rr

Reverse Recovery Charge

-

443

744

nC

T

J

= 25°C

-

2086 3355

T

J

= 125°C

I

F

= 50A

V

R

= 200V

di

F

/dt = 200A/μs

DYNAMIC RECOVERY CHARACTERISTICS @ T

J

= 25°C (UNLESS OTHERWISE SPECIFIED)

THERMAL-MECHANICAL SPECIFICATIONS

V

BR

Cathode Anode

600

-

-

V

I

R

= 100μA

Breakdown Voltage

V

FM

Forward Voltage

-

1.28 1.44

V

I

F

= 100A

-

1.48 1.66

V

I

F

= 200A

-

1.13 1.24

V

I

F

= 100A, T

J

= 125°C

-

1.37 1.55

V

I

F

= 200A

I

RM

Reverse Leakage Current

-

5

100

μA

V

R

= V

R

Rated

-

0.2

1

mA

T

J

= 175°C, V

R

= V

R

Rated

C

T

Junction Capacitance

-

80

-

pF

V

R

= 600V

PARAMETERS

MIN TYP MAX UNITS TETS CONDITIONS

ELECTRICAL CHARACTERISTICS @ T

J

= 25°C (UNLESS OTHERWISE SPECIFIED)

PARAMETERS

MIN TYP MAX UNITS TETS CONDITIONS