Vishay semiconductors – C&H Technology VSKT570-18PbF User Manual
Page 4
Document Number: 93281
For technical questions, contact:
www.vishay.com
Revision: 05-May-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSKT570-18PbF
Thyristor/Thyristor
(SUPER MAGN-A-PAK Power Modules), 570 A
Vishay Semiconductors
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
P
GM
T
J
= T
J
maximum, t
p
5 ms
10
W
Maximum peak average gate power
P
G(AV)
T
J
= T
J
maximum, f = 50 Hz, d% = 50
2.0
Maximum peak positive gate current
+I
GM
T
J
= T
J
maximum, t
p
5 ms
3.0
A
Maximum peak positive gate voltage
+V
GM
20
V
Maximum peak negative gate voltage
-V
GM
5.0
Maximum DC gate current required to trigger
I
GT
T
J
= 25 °C, V
ak
12 V
200
mA
DC gate voltage required to trigger
V
GT
3.0
V
DC gate current not to trigger
I
GD
T
J
= T
J
maximum
10
mA
DC gate voltage not to trigger
V
GD
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
temperature range
T
J
- 40 to 135
°C
Maximum storage temperature range
T
Stg
- 40 to 135
Maximum thermal resistance,
junction to case per junction
R
thJC
DC operation
0.065
K/W
Maximum thermal resistance,
case to heatsink
R
thC-hs
0.02
Mounting torque ± 10 %
SMAP to heatsink
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
6-8
Nm
busbar to SMAP
12-15
Approximate weight
1500
g
Case style
See dimensions (link at the end of datasheet)
SUPER MAGN-A-PAK
R
thJC
CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
0.009
0.006
T
J
= T
J
maximum
K/W
120°
0.011
0.011
90°
0.014
0.015
60°
0.021
0.022
30°
0.037
0.038