C&H Technology VSKT570-18PbF - Manual (Page 3)

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2 Revision: 05-May-11
This document is subject to change without notice.
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VSKT570-18PbF
Vishay Semiconductors Thyristor/Thyristor
(SUPER MAGN-A-PAK Power Modules), 570 A
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° conduction, half sine wave
570 A
74 °C
Maximum RMS on-state current I
T(RMS)
180° conduction, half sine wave at T
C
= 74 °C 895 A
Maximum peak, one-cycle,
non-repetitive on-state surge current I
TSM,
I
FSM
t = 10 ms No voltage
reapplied
Sinusoidal
half wave,
initial T
J
= T
J
maximum
17.8
kA
t = 8.3 ms 18.7
t = 10 ms 100 % V
RRM
reapplied
15.0
t = 8.3 ms 15.7
Maximum I 2 t for fusing I 2 t
t = 10 ms No voltage
reapplied 1591
kA 2 s
t = 8.3 ms 1452
t = 10 ms 100 % V
RRM
reapplied
1125
t = 8.3 ms 1027
Maximum I 2 t for fusing I 2 t t = 0.1 ms to 10 ms, no voltage reapplied 15 910 kA 2 s
Low level value or threshold voltage V
T(TO)1
(16.7 % x
 x I
T(AV)
< I <
 x I
T(AV)
), T
J
= T
J
maximum 0.864
V
High level value of threshold voltage V
T(TO)2
(I >
 x I
T(AV)
), T
J
= T
J
maximum 0.97
Low level value on-state slope resistance r
t1
(16.7 % x
 x I
T(AV)
< I <
 x I
T(AV)
), T
J
= T
J
maximum 0.411
m

High level value on-state slope resistance r
t2
(I >
 x I
T(AV)
), T
J
= T
J
maximum 0.362
Maximum on-state voltage drop V
TM
I
pk
= 1500 A, T
J
= 25 °C, t
p
= 10 ms sine pulse 1.50 V
Maximum holding current I
H
T
J
= 25 °C, anode supply 12 V resistive load
500
mA
Maximum latching current I
L
1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum rate of rise of turned-on current dI/dt T
J
= T
J
maximum, I
TM
= 400 A, V
DRM
applied 1000 A/μs
Typical delay time t
d
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
2.0
μs
Typical turn-off time t
q
I
TM
= 750 A; T
J
= T
J
maximum, dI/dt = - 60 A/μs,
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100

200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise
of off-state voltage
dV/dt T
J
= T
J
maximum, linear to V
D
= 80 % V
DRM
1000 V/μs
RMS insulation voltage V
INS
t = 1 s 3000 V
Maximum peak reverse and
off-state leakage current I
RRM
,
I
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied 120 mA