C&H Technology GA100TS60SF - Manual (Page 5)

GA100TS60SF
Bulletin I27201 rev. A 01/06
Fig. 5 - Typical Gate Charge vs. Gate-to-
Emitter Voltage
V
GE
, Gate-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Switching Losses (mJ)
R
G
, Gate Reistance (Ω)
Switching Losses (mJ)
I
C
, Collector-to-Emitter Current (A)
0
5
10
15
20
0 100 200 300 400 500 600 700
Vcc = 400V
Ic = 100A
0
5
10
15
20
25
30
35
10 20 30 40 50
Eon
Eoff
Tj = 25˚C, Vce = 480V
Vge = 15V, Ic = 100A
Fig. 6 - Typical Switching Losses vs Gate
Resistance
Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current
0
10
20
30
40
50
60
0 40 80 120 160
Eon
Eoff
Tj = 125˚C
Vce = 480V
Vge = 15V
Rge = 15
Ω
Document Number: 93619 www.vishay.com
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