Vishay semiconductors – C&H Technology VS-GT175DA120U User Manual
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VS-GT175DA120U
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Vishay Semiconductors
Revision: 02-Aug-12
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Document Number: 93990
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Fig. 16 - Maximum Thermal Impedance Z
thJC
Characteristics (IGBT)
Fig. 17 - Maximum Thermal Impedance Z
thJC
Characteristics (Diode)
Fig. 18 - IGBT Rverse Bias SOA, T
J
= 150 °C, V
GE
= 15 V
0.01
0.1
1
0.001
0.0001 0.001 0.01 0.1 1 10
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.75
0.50
0.25
0.1
0.05
0.02
DC
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impe
d
ance
Junction to Case (°C/W)
0.01
0.1
1
0.001
0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impe
d
ance
Junction to Case (°C/W)
0.75
0.50
0.25
0.1
0.05
0.02
DC
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
I
C
(A)
V
CE
(V)
1
10
100
1000
10 000
0.01
0.1
1
1000
10
100