Vishay semiconductors – C&H Technology VS-GT175DA120U User Manual
Page 2
VS-GT175DA120U
www.vishay.com
Vishay Semiconductors
Revision: 02-Aug-12
1
Document Number: 93990
For technical questions within your region:
,
,
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Insulated Gate Bipolar Transistor
(Trench IGBT), 175 A
Note
(1)
Maximum collector current admitted is 100 A, to not exceed the
maximum temperature of terminals
FEATURES
• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 10 μs short circuit capability
• HEXFRED
®
antiparallel diodes with ultrasoft reverse
recovery
• T
J
maximum = 150 °C
• Fully isolated package
• Very low internal inductance (
5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Speed 4 kHz to 30 kHz
• Very low V
CE(on)
• Low EMI, requires less snubbing
Note
(1)
Maximum collector current admitted is 100 A, to do not exceed the maximum temperature of terminals
PRODUCT SUMMARY
V
CES
1200 V
I
C
DC
175 A at 90 °C
(1)
V
CE(on)
typical at 100 A, 25 °C
1.73 V
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
1200
V
Continuous collector current
I
C
(1)
T
C
= 25 °C
288
A
T
C
= 90 °C
175
Pulsed collector current
I
CM
450
Clamped inductive load current
I
LM
450
Diode continuous forward current
I
F
T
C
= 25 °C
54
T
C
= 90 °C
32
Gate to emitter voltage
V
GE
± 20
V
Power dissipation, IGBT
P
D
T
C
= 25 °C
1087
W
T
C
= 90 °C
522
Power dissipation, diode
P
D
T
C
= 25 °C
219
T
C
= 90 °C
105
Isolation voltage
V
ISOL
Any terminal to case, t = 1 min
2500
V