Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GT175DA120U User Manual
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VS-GT175DA120U
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Vishay Semiconductors
Revision: 02-Aug-12
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Document Number: 93990
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Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - Typical Collector to Emitter Current Output Characteristics
of IGBT
Fig. 3 - Maximum Allowable Forward Current vs. Case Temperature
Diode Leg
Fig. 4 - Typical Diode Forward Voltage Drop Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN. TYP. MAX.
UNITS
Maximum junction and storage temperature range
T
J
, T
Stg
- 40
-
150
°C
Junction to case thermal resistance
IGBT
R
thJC
-
-
0.115
°C/W
Diode
-
-
0.57
Case to sink thermal resistance, flat, greased surface
R
thCS
-
0.05
-
Mounting torque, on terminals and heatsink
-
-
1.3
Nm
Weight
-
30
-
g
Case style
SOT-227
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
0
40
80
120
200
160
240
280
320
0
160
100
120
140
20
40
60
80
DC
V
CE
-
Collector-to-Emitter Voltage (V)
I
C
-
Collector to Emitter Curr
ent (A)
0
4.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
300
100
200
275
75
175
250
50
150
225
25
125
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
V
GE
= 15 V
I
F
-
Continuous
Forward Current (A)
Allowable Case Temperature (°C)
80
100
120
140
160
0
20
40
60
0 10 20 30 40 50 60 70 80
V
F
-
Forward Voltage Drop Characteristics (V)
I
F
- Forwar
d
Curr
ent (A)
4.0
2.0
1.0
3.0
5.0
7.0
8.0
6.0
0
160
200
0
40
80
120
T
J
= 25 °C
T
J
= 150 °C
T
J
= 125 °C