C&H Technology VSK.F200..P Series - Manual (Page 7)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94422
6 Revision: 03-Jun-08
VSK.F200..P Series
Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK TM Power Modules), 200 A
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
1000
5000
150
2500
P
e
a
k
O
n
-s
ta
ta
C
u
rr
en
t (
A
)
Pulse Basewidth (µs)
VSK.F200.. Series
Sinusoidal pulse
T = 85°C Snub ber c irc uit
R = 10 ohms
C = 0.47 µF
V = 80% V
tp
1E4
DRM
C
s
s
D
1E1 1E2 1E3 1E4
50 Hz
400
1000
5000
150
2500
Pulse Basewidth (µs)
Snubb er circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
VSK.F200.. Series
Sinusoidal pulse
T = 60°C
tp
1E1
C
DRM
s
s
D
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
1000
5000
150
2500
Pulse Basewidth (µs)
P
e
a
k
O
n
-s
ta
te
C
u
rr
e
n
t (
A
)
VSK.F200.. Series
Trapezoid a l pulse
T = 85°C d i/d t 50A/ µs
Snubber circ uit
R = 10 ohms
C = 0.47 µF
V = 80% V
1E4
tp
DRM
C
s
s
D
E1 1E2 1E3 1E4
50 Hz
400
1000
5000
150
2500
Pulse Basewidth (µs)
Snubber circ uit
R = 10 ohms
C = 0.47 µF
V = 80% V
VSK.F200.. Series
Trap ezoid al p ulse
T = 85°C d i/ d t 100A/ µs
1E1
tp
DRM
s
s
D
C
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
1000
5000
150
2500
P
e
a
k
O
n
-s
tate C
u
rr
e
n
t (
A
)
Pulse Basewidth (µs)
Snub ber circ uit
R = 10 ohms
C = 0.47 µF
V = 80% V
VSK.F200.. Series
Tra pezoid al pulse
T = 60°C d i/ dt 50A/ µs
1E4
tp
DRM
C
s
s
D
E1 1E2 1E3 1E4
50 Hz
400
1000
5000
150
2500
Pulse Basewidth (µs)
VSK.F200.. Series
Trapezoid al p ulse
T = 60°C di/ d t 100A/ µs
Snub ber c irc uit
R = 10 ohms
C = 0.47 µF
V = 80% V
1E1
tp
DRM C
s
s
D