C&H Technology VSK.F200..P Series - Manual (Page 3)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94422
2 Revision: 03-Jun-08
VSK.F200..P Series
Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK TM Power Modules), 200 A
CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 380 560 630 850 2460 3180
A
400 Hz 460 690 710 1060 1570 2080
2500 Hz 310 450 530 760 630 860
5000 Hz 250 360 410 560 410 560
10 000 Hz 180 280 300 410 - -
Recovery voltage V
r
50 50 50 50 50 50
V
Voltage before turn-on V
d
80 % V
DRM
80 % V
DRM
80 % V
DRM
Rise of on-state current dI/dt 50 50 - - - - A/µs
Case temperature 85 60 85 60 85 60 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47
Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° conduction, half sine wave
200 A
85 °C
Maximum RMS on-state current I
T(RMS)
As AC switch 444
A
Maximum peak, one-cycle
non-repetitive on-state,
surge current
I
TSM
t = 10 ms No voltage
reapplied
Sinusoidal
half wave,
initial T
J
= 125 °C
7600
t = 8.3 ms 8000
t = 10 ms 100 % V
RRM
reapplied
6400
t = 8.3 ms 6700
Maximum I 2 t for fusing I 2 t
t = 10 ms No voltage
reapplied 290
kA 2 s
t = 8.3 ms 265
t = 10 ms 100 % V
RRM
reapplied
205
t = 8.3 ms 187
Maximum I 2 √t for fusing
I 2 √t
t = 0.1 to 10 ms, no voltage reapplied 2900 kA 2 √s
Low level value or threshold voltage V
T(TO)1
(16.7 % x
π x I
T(AV)
< I <
π x I
T(AV)
),
T
J
= T
J
maximum
1.18
V
High level value of threshold voltage V
T(TO)2
(I >
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
maximum 1.25
Low level value on-state slope resistance r
t1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
),
T
J
= T
J
maximum
0.74
m
Ω
High level value on-state slope resistance r
t2
(I > π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 0.70
Maximum on-state voltage drop V
TM
I
pk
= 600 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse 1.73 V
Maximum holding current I
H
T
J
= 25 °C, I
T
> 30 A 6000
mA
Maximum latching current I
L
T
J
= 25 °C, V
A
= 12 V, Ra = 6
Ω, I
g
= 1A 1000
180° el
I
TM
180° el
I
TM
100 µs
I
TM