Vishay semiconductors – C&H Technology VSKN26.. Series User Manual
Page 7
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 94629
6
,
,
Revision: 17-May-10
VSKT26.., VSKH26.., VSKL26.., VSKN26.. Series
Vishay Semiconductors
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 27 A
Fig. 10 - On-State Voltage Drop Characteristics
Fig. 11 - Thermal Impedance Z
thJC
Characteristics
Fig. 12 - Gate Characteristics
Instantaneous on-state voltage (V)
Instantaneous on-state current (A)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
1
10
100
1000
Tj = 25°C
Tj = 125°C
Per leg
Square wave pulse duration (s)
Transient thermal impedance Z
thJC
(°C/W)
0.001
0.01
0.1
1
10
0.01
0.1
1
10
Steady state value
RthJC = 0.76 °C/W
(DC operation)
Per leg
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
(b )
(a)
Rect ang ular g ate p ulse
(4) (3)
(2) (1)
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
TJ
=
-
4
0
°
C
TJ
=
2
5
°
C
TJ
=
1
2
5
°
C
a )Recommended load line for
b)Recommended load line for
VGD
IGD
Frequenc y Limited by PG(AV)
rated di/ d t: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated d i/ d t: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
IRK.26.. Series
Instantaneous gate voltage (V)
Instantaneous gate current (A)
VSK.