Vishay semiconductors – C&H Technology T85HFL Series User Manual
Page 9
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Document Number: 93184
8
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Revision: 19-May-10
T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
Fig. 25 - Recovery Time Characteristics
Fig. 26 - Recovery Charge Characteristics
Fig. 27 - Recovery Current Characteristics
Fig. 28 - Recovery Time Characteristics
Fig. 29 - Recovery Charge Characteristics
Fig. 30 - Recovery Current Characteristics
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
0
0
1
0
1
100A
50A
200A
Ma
x
imu
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
T
im
e
-
T
rr
(
µ
s)
Ra te Of Fa ll Of Forwa rd Current - d i/ d t (A/ µs)
I = 300A
FM
T40HFL..S10
T70HFL..S10
T = 125 °C
J
5
10
15
20
25
30
35
40
10 20 30 40 50 60 70 80 90 100
100A
50A
200A
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
h
a
rg
e
-
Q
rr
(µ
C
)
Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs)
I = 300A
FM
T40HFL..S10
T70HFL..S10
T = 125 °C
J
10
15
20
25
30
35
40
45
10 20 30 40 50 60 70 80 90 100
100A
50A
200A
Ma
x
im
u
m R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rr
e
n
t -
I
rr
(
A
)
Ra te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs)
I = 300A
FM
T40HFL..S10
T70HFL..S10
T = 125 °C
J
0.6
0.7
0.8
0.9
1
1.1
1.2
0
0
1
0
1
100A
50A
200A
M
a
xi
m
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
T
im
e
-
T
rr (
µ
s)
Ra te Of Fa ll Of Forwa rd Current - di/ dt (A/ µs)
T85HFL..S02
T = 125°C
I = 300A
J
FM
5
10
15
20
25
10 20 30 40 50 60 70 80 90 100
200A
100A
50A
Ma
x
imu
m R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
h
a
rg
e
-
Q
rr
(
µ
C
)
Ra te Of Fa ll Of Forward Current - di/ d t (A/ µs)
T85HFL..S02
T = 125 °C
I = 300A
J
FM
6
8
10
12
14
16
18
20
22
24
26
28
10 20 30 40 50 60 70 80 90 100
200A
100A
50A
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rre
n
t
- Irr
(
A
)
Ra te Of Fall Of Forwa rd Current - di/ d t (A/ µs)
T85HFL..S02
T = 125°C
I = 300A
J
FM