C&H Technology T85HFL Series - Manual (Page 10)

Document Number: 93184 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 19-May-10 [email protected] , [email protected] , [email protected] 9
T40HFL, T70HFL, T85HFL Series
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
Vishay Semiconductors
Fig. 31 - Recovery Time Characteristics
Fig. 32 - Recovery Charge Characteristics
Fig. 33 - Recovery Current Characteristics
Fig. 34 - Recovery Time Characteristics
Fig. 35 - Recovery Charge Characteristics
Fig. 36 - Recovery Current Characteristics
0.8
0.9
1
1.1
1.2
1.3
0 0 1 0 1
100A
50A
200A
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
T
im
e
-
Tr
r (
µ
s)
Ra te Of Fall Of Forward Current - di/ d t (A/ µs)
I = 300A
T85HFL..S05
T = 125°C
FM
J
6
9
12
15
18
21
24
27
30
10 20 30 40 50 60 70 80 90 100
200A
Ma
x
imu
m R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
h
a
rg
e
-
Q
rr
(
µ
C
)
Ra te Of Fall Of Forwa rd Current - di/ d t (A/ µs)
T85HFL..S05
T = 125°C
100A
50A
J
I = 300A FM
10
15
20
25
30
35
10 20 30 40 50 60 70 80 90 100
100A
50A
200A
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rre
n
t -
Ir
r (
A
)
Ra te Of Fall Of Forwa rd Current - di/ dt (A/ µs)
T85HFL..S05
T = 125°C
I = 300A
J
FM
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
0 0 1 0 1
100A
50A
200A
M
a
x
imu
m R
e
v
e
rs
e
R
e
c
o
v
e
ry
T
ime
-
T
rr
(
µ
s)
Ra te Of Fa ll Of Forward Current - di/ dt (A/ µs)
T85HFL..S10
T = 125°C
I = 300A
J
FM
10
15
20
25
30
35
40
45
50
55
10 20 30 40 50 60 70 80 90 100
200A
Ma
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
h
a
rg
e
-
Q
rr
(
µ
C
)
Ra te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs)
100A
50A
T85HFL..S10
T = 125°C
J
I = 300A
FM
15
20
25
30
35
40
45
50
55
60
10 20 30 40 50 60 70 80 90 100
100A
50A
200A
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rr
e
n
t - I
rr
(
A
)
I = 300A
T85HFL..S10
T = 125°C
Rate Of Fall Of Forwa rd Current - d i/ dt (A/µs)
FM
J