Vishay semiconductors – C&H Technology T85HFL Series User Manual
Page 8

Document Number: 93184
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-May-10
,
,
7
T40HFL, T70HFL, T85HFL Series
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
Vishay Semiconductors
Fig. 19 - Recovery Time Characteristics
Fig. 20 - Recovery Charge Characteristics
Fig. 21 - Recovery Current Characteristics
Fig. 22 - Recovery Time Characteristics
Fig. 23 - Recovery Charge Characteristics
Fig. 24 - Recovery Current Characteristics
0.45
0.46
0.47
0.48
0.49
0.5
0.51
0
0
1
0
1
100A
220A
172A
50A
Ra te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs)
Ma
x
imu
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
T
ime
-
T
rr
(µ
s)
I = 300A
FM
T40HFL..S02
T70HFL..S02
T = 125 °C
J
1
2
3
4
5
6
7
8
10 20 30 40 50 60 70 80 90 100
100A
220A
172A
50A
Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs)
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
h
a
rg
e
- Q
rr
(
µ
C
)
I = 300A
FM
T40HFL..S02
T70HFL..S02
T = 125 °C
J
4
6
8
10
12
14
16
18
20
10 20 30 40 50 60 70 80 90 100
100A
220A
172A
50A
Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs)
M
a
x
im
u
m
R
e
v
e
rs
e R
e
c
o
v
e
ry
C
u
rr
en
t
- I
rr
(
A
)
I = 300A
T40HFL..S02
T70HFL..S02
T = 125 °C
FM
J
0.6
0.7
0.8
0.9
1
1.1
0
0
1
0
1
100A
220A
172A
50A
M
a
x
im
u
m
R
e
ve
rs
e
R
e
c
o
ve
ry
T
im
e
-
T
rr
(
µ
s)
Ra te Of Fa ll Of Fo rwa rd Current - di/ dt (A/ µs)
I = 300A
FM
T40HFL..S05
T70HFL..S05
T = 125 °C
J
4
6
8
10
12
14
16
18
20
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Forward Current - di/ d t (A/ µs)
M
a
x
imu
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
h
a
rg
e
-
Qr
r
(µ
C
)
220A
172A
100A
50A
I = 300A
FM
T40HFL..S05
T70HFL..S05
T = 125 °C
J
6
8
10
12
14
16
18
20
22
24
26
28
10 20 30 40 50 60 70 80 90 100
220A
172A
100A
50A
M
a
xi
m
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rr
e
n
t
- Ir
r (
A
)
Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs)
I = 300A
FM
T40HFL..S05
T70HFL..S05
T = 125 °C
J