Vishay high power products – C&H Technology GB100TS60NPbF User Manual
Page 6
Document Number: 94501
For technical questions, contact: [email protected]
www.vishay.com
Revision: 07-May-08
5
GB100TS60NPbF
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT),
108 A
Vishay High Power Products
Fig. 11 - Typical Diode I
RR
vs. I
F
,
T
J
= 125 °C
Fig. 12 - Typical Diode I
RR
vs. R
G
,
T
J
= 125 °C, I
F
= 100 A
Fig. 13 - Typical Diode I
RR
vs. dI
F
/dt,
T
J
= 125 °C, V
CC
= 360 V, I
F
= 150 A, V
GE
= 15 V
Fig. 14 - Typical Switching Losses vs. Gate Resistance,
T
J
= 125 °C, L = 200 µH, R
G
= 10
Ω,
V
CC
= 360 V, V
GE
= 15 V
Fig. 15 - Typical Switching Losses vs. Junction Temperature,
L = 200 µH, R
G
= 10
Ω, V
CC
= 360 V, V
GE
= 15 V
Fig. 16 - Typical Switching Losses vs.
Collector to Emitter Current,
T
J
= 125 °C, R
G1
= 4.7 V, R
G2
= 0
Ω, V
CC
= 360 V, V
GE
= 15 V
I
RR
(A)
I
F
(A)
0
20
40
60
80
100
120
0
10
20
30
40
50
60
70
80
90
100
27 ohm
47 ohm
4.7 ohm
0
10
20
30
40
50
0
20
40
60
80
100
I
RR
(A)
R
G
(
Ω)
600
800
1000
1200
1400
1600
1800
50
60
70
80
90
I
RR
(A)
dI
F
/ dt (A/μs)
Total Switching Losses (mJ)
R
G
(
Ω)
0
10
20
30
40
50
1
2
3
4
5
6
7
8
9
Total Switching Losses (mJ)
T
J
- Junction Temperature (°C)
0
25
50
75
100
125
0.1
1
10
Ic = 100A
Ic = 50A
Ic = 25A
Total Switching Losses (mJ)
I
C
(A)
20
40
60
80
100
0
0.5
1
1.5
2
2.5