C&H Technology GB100TS60NPbF - Manual (Page 4)

Document Number: 94501 For technical questions, contact: [email protected] www.vishay.com
Revision: 07-May-08 3
GB100TS60NPbF
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT),
108 A
Vishay High Power Products
Fig. 1 - Typical IGBT Output Characteristics
T
J
= 25 °C, t
p
= 500 µs
Fig. 2 - Typical IGBT Output Characteristics
T
J
= 125 °C, t
p
= 500 µs
Fig. 3 - Typical Transfer Characteristics
V
CE
= 20 V, t
p
= 500 µs
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature,
V
GE
= 15 V, 500 µs pulse width
THERMAL - MECHANICAL CHARACTERISTICS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Operating junction and storage temperature range T
J
, T
Stg
- 40 - 150 °C
Junction to case per leg
IGBT
R
thJC
- 0.23 0.32
°C/W Diode - 0.38 0.64
Case to sink per module R
thCS
- 0.1 -
Mounting torque
case to heatsink - - 4
Nm
case to terminal 1, 2, 3 - - 3
Weight - 185 - g
I cE
(A)
V
CE
(V)
0 1 2 3 4 5 6
0
50
100
150
200
Vge = 9V
Vge = 18V
Vge = 15V
Vge = 12V
I cE
(A)
0 1 2 3 4 5 6
0
50
100
150
200
Vge = 9V
Vge = 18V
Vge = 15V
Vge = 12V
V
CE
(V)
I cE
(A)
V
GE
(V)
0 2 4 6 8 10
0
20
40
60
80
100
120
140
160
180
200
Tj = 25°C
Tj = 125°C
0 20 40 60 80 100 120 140 160
1.5
2
2.5
3
3.5
4
4.5
5
Ic = 50A
Ic = 100A
Ic = 200A
T
J
, Junction Temperature (°C)
V
CE
, Collector -to-Emitter Voltage (V)