Vishay high power products – C&H Technology GB100TS60NPbF User Manual
Page 5
www.vishay.com
For technical questions, contact: [email protected]
Document Number: 94501
4
Revision: 07-May-08
GB100TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT),
108 A
Fig. 5 - Diode Forward Characteristics, t
p
= 500 µs
Fig. 6 - Maximum Collector Current vs.
Case Temperature
Fig. 7 - Typical Energy Loss vs. I
C
, T
J
= 125 °C,
L = 200 µH, V
CC
= 360 V, R
G
= 4.7
Ω, V
GE
= 15 V
Fig. 8 - Typical Switching Time vs. I
C
T
J
= 125 °C, L = 200 µH, V
CC
= 360 V,
R
G
= 4.7
Ω, V
GE
= 15 V
Fig. 9 - Typical Energy Loss vs. R
G
T
J
= 125 °C, L = 200 µH, V
CC
= 360 V,
I
CE
= 100 A, V
GE
= 15 V
Fig. 10 - Typical Switching Time vs. R
G
T
J
= 125 °C, L = 200 µH, V
CC
= 360 V,
I
CE
= 100 A, V
GE
= 15 V
I
F
(A)
V
F
(V)
0.0
0.5
1.0
1.5
2.0
0
50
100
150
200
Tj = 25°C
Tj = 125°C
0
20
40
60
80
100
120
0
20
40
60
80
100
120
140
160
DC
T
C
, Case Temperature (°C)
Maximum DC Collector Current (A)
Energy (mJ)
I
C
(A)
0
20
40
60
80
100
120
0
200
400
600
800
1000
1200
1400
Eon
Eoff
Switching Time (ns)
I (A)
20
40
60
80
100
10
100
1000
td(off)
tr
td(on)
tf
0
10
20
30
40
50
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
Eon
Eoff
Energy (mJ)
R
G
(
Ω)
0
10
20
30
40
50
10
100
1000
td(off)
tr
td(on)
tf
Energy Time (ns)
R
G
(
Ω)