Vishay semiconductors – C&H Technology VS-GA400TD60S User Manual
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Document Number: 93363
4
Revision: 31-May-11
This document is subject to change without notice.
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GA400TD60S
Vishay Semiconductors
Dual INT-A-PAK Low Profile "Half-Bridge"
(Standard Speed IGBT), 400 A
Fig. 5 - Typical IGBT Transfer Characteristics
Fig. 6 - Typical IGBT Gate Threshold Voltage
Fig. 7 - IGBT Reverse Bias SOA,
T
J
= 150 °C, V
GE
= 15 V, R
g
= 22
Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 9 - Typical Diode Forward Characteristics
Fig. 10 - Maximum DC Forward Current vs. Case Temperature
I
C
(A)
V
GE
(V)
3
9
4
5
7
6
8
0
100
200
400
300
600
500
700
93363_05
800
T
J
= 25 °C
T
J
= 125 °C
V
CE
= 20 V
V
g
eth
(V)
I
C
(mA)
0.4
1.0
0.5
0.6
0.8
0.7
0.9
2.0
2.5
3.0
4.0
3.5
4.5
93363_06
5.0
T
J
= 25 °C
T
J
= 125 °C
I
C
(A)
V
CE
(V)
1
10
100
1000
1
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10 000
10
100
1000
I
CE
S
(mA)
V
CES
(V)
100
600
200
300
400
500
0.001
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10
0.1
0.01
1
T
J
= 25 °C
T
J
= 125 °C
I
F
(A)
V
FM
(V)
0
2.5
0.5
1.0
1.5
2.0
0
93363_09
600
200
100
300
500
400
T
J
= 25 °C
T
J
= 125 °C
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
160
120
80
40
200
240
0
100
160
0
40
60
140
80
120
20
93363_10
DC