Vishay semiconductors – C&H Technology VS-GA400TD60S User Manual
Page 2
Document Number: 93363
For technical questions, contact:
www.vishay.com
Revision: 31-May-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Dual INT-A-PAK Low Profile "Half-Bridge"
(Standard Speed IGBT), 400 A
GA400TD60S
Vishay Semiconductors
Dual INT-A-PAK Low Profile
FEATURES
• Generation 4 IGBT technology
• Standard: Optimized for hard switching speed
DC to 1 kHz
• Low V
CE(on)
• Square RBSOA
• HEXFRED
®
antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al
2
O
3
DBC
• UL approved file E78996
• Compliant to RoHS Directive 2002/95/EC
• Designed for industrial level
BENEFITS
• Increased operating efficiency
• Performance optimized as output inverter stage for TIG
welding machines
• Direct mounting on heatsink
• Very low junction to case thermal resistance
Note
(1)
Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals
PRODUCT SUMMARY
V
CES
600 V
I
C
DC at T
C
= 25 °C
750 A
V
CE(on)
(typical) at 400 A, 25 °C
1.24 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
TEST
CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
600
V
Continuous collector current
I
C
(1)
T
C
= 25 °C
750
A
T
C
= 80 °C
525
Pulsed collector current
I
CM
1000
Clamped inductive load current
I
LM
1000
Diode continuous forward current
I
F
T
C
= 25 °C
219
T
C
= 80 °C
145
Gate to emitter voltage
V
GE
± 20
V
Maximum power dissipation (IGBT)
P
D
T
C
= 25 °C
1563
W
T
C
= 80 °C
875
RMS isolation voltage
V
ISOL
Any terminal to case
(V
RMS
t = 1 s, T
J
= 25 °C)
3500
V