C&H Technology CM75MX-12A - Manual (Page 4)

CM75MX-12A
NX-Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
3 Rev. 11/11
Electrical Characteristics, T
j
= 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V — — 1.0 mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V — — 0.5 µA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 7.5mA, V
CE
= 10V 5 6 7 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
T
j
= 25°C, I
C
= 75A, V
GE
= 15V *5 — 1.7 2.1 Volts
T
j
= 125°C, I
C
= 75A, V
GE
= 15V *5 — 1.9 — Volts
I
C
= 75A, V
GE
= 15V, Chip *5 — 1.6 — Volts
Input Capacitance C
ies
— — 7.5 nF
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V — — 1.0 nF
Reverse Transfer Capacitance C
res
— — 0.3 nF
Total Gate Charge Q
G
V
CC
= 300V, I
C
= 75A, V
GE
= 15V — 200 — nC
Inductive Turn-on Delay Time t
d(on)
— — 100 ns
Load Turn-on Rise Time t
r
V
CC
= 300V, I
C
= 75A, V
GE
= ±15V, — — 100 ns
Switch Turn-off Delay Time t
d(off)
R
G
= 8.2Ω, Inductive Load — — 300 ns
Time Turn-off Fall Time t
f
— — 600 ns
Emitter-Collector Voltage V
EC
*1 T
j
= 25°C, I
E
= 75A, V
GE
= 0V *5 — 2.0 2.8 Volts
T
j
= 125°C, I
E
= 75A, V
GE
= 0V *5 — 1.95 — Volts
I
E
= 75A, V
GE
= 0V, Chip — 1.9 — Volts
Reverse Recovery Time t
rr
*1 V
CC
= 300V, I
E
= 75A, V
GE
= ±15V — — 200 ns
Reverse Recovery Charge Q
rr
*1 R
G
= 8.2Ω, Inductive Load — 1.8 — µC
Internal Gate Resistance r
g
T
C
= 25°C, Per Switch — 0 — Ω
External Gate Resistance R
G
8.0 — 83 Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.