C&H Technology GB05XP120KTPbF - Manual (Page 7)

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GB05XP120KTPbF
Vishay Semiconductors Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED ® Diodes, 5 A
Fig. 15 - Typical Transfer Characteristics
V
CE
= 50 V; t
p
= 10 μs
Fig. 16 - Typical Diode Forward Characteristics
t
p
= 80 μs
Fig. 17 - Typical Diode I
rr
vs. I
F
T
J
= 125 °C
Fig. 18 - Typical Diode I
rr
vs. R
g
T
J
= 125 °C; I
F
= 10 A
Fig. 19 - Typical Diode I
rr
vs. dI
F
/dt; V
CC
= 600 V;
V
GE
= 15 V; I
CE
= 10 A, T
J
= 125 °C
0 4 8 12 16
0
10
20
30
40
50
Vge (V)
Ic
e
(
A
)
Tj = 25°C
Tj = 125°C
0 1 2 3 4 5
0
5
10
15
20
Vf (V)
If
(
A
)
Tj = 25°C
Tj = 125°C
2 4 6 8 10 12 14 16
6
11
16
21
26
If (A)
Irr (
A
)
Rg=4.7 Ω
Rg= 10 Ω
Rg=22 Ω
Rg=47 Ω
0 10 20 30 40 50
9
11
13
15
17
19
Rg ( )
Irr (
A
)
300 360 420 480
9
11
13
15
17
19
dif/dt (A/µs)
Irr (
A
)