C&H Technology GB05XP120KTPbF - Manual (Page 6)

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Revision: 03-Aug-10 [email protected] , [email protected] , [email protected] 5
GB05XP120KTPbF
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED ® Diodes, 5 A
Vishay Semiconductors
Fig. 9 - Typical Capacitance vs. V
CE
V
GE
= 0 V; f = 1 MHz
Fig. 10 - Typical Gate Charge vs. V
GE
I
CE
= 5 A
Fig. 11 - Maximum DC Collector Current vs.
Case Temperature
Fig. 12 - Power Dissipation vs. Case Temperature
(IGBT only)
Fig. 13 - Forward SOA
T
C
= 25 °C, T
J
 150 °C
Fig. 14 - Reverse BIAS SOA
T
J
= 150 °C, V
GE
= 15 V
0 10 20 30 40
10
100
1000
Vce (V)
Ca
pac
it
a
nc
e
(
p
F)
Cies
Coes
Cres
Q
G
, Total Gate Charge (nC)
0 5 10 15 20 25 30
0
2
4
6
8
10
12
14
16
600V
V
GE
(V)
0 40 80 120 160
0
3
6
9
12
15
Ic
(
A
)
Tc (°C)
0 40 80 120 160
0
10
20
30
40
50
Tc (°C)
Ptot (W)
1 10 100 1000 10000
0.01
0.1
1
10
100
Vce (V)
Ic
(
A
)
20 µs
100 µs
1 ms
DC
10 100 1000 10000
1
10
100
Vce (V)
Ic
(
A
)