Epson S1F77B01 User Manual
Page 12
13. ELECTRICAL CHARACTERISTICS, DELAY CIRCUIT BUILT-IN PRODUCTS
8
EPSON
S1F77B01 Technical Manual (Rev.1.3)
13. ELECTRICAL CHARACTERISTICS, DELAY CIRCUIT BUILT-IN PRODUCTS
(1) CMOS
output
(T
a
=25°C RL=
∞ unless otherwise specified)
Item Symbol
Conditions
Min. Typ.
Max.
Unit
Detecting voltage
V
DET
-
-
V
DET-
(S)
×0.98 V
DET-
(S) V
DET-
(S)
×1.02
V
Hysteresis width
V
HYS
V
HYS
=(V
DET+
)-(V
DET-
) V
DET
-*0.03 V
DET
-*0.05 V
DET
-*0.07
V
V
DD
=2.5V, V
DET-
(S)=1.5V
-
350 700
V
DD
=3.7V, V
DET-
(S)=2.7V
- 350 700
Consumption current 1 I
SS1
V
DD
=5.5V, V
DET-
(S)=4.6V
- 350 700
nA
V
DD
=1.3V, V
DET-
(S)=1.5V
- 280 560
V
DD
=2.5V, V
DET-
(S)=2.7V
- 280 560
Consumption current 2 I
SS2
V
DD
=4.4V, V
DET-
(S)=4.6V
- 280 560
nA
Max. operating voltage V
DDH
-
-
- 5.5
V
Min. operating voltage V
DDL
- 0.9
-
- V
V
DD
=0.9V, V
DS
=0.5V
0.2 0.8 1.5
V
DD
=1.2V, V
DS
=0.5V
1.0 2.2 3.5
I
OUTN
[Nch]
V
DD
DET- V DD =2.4V, V DS =0.5V 5.5 6.8 8.1 V DD =3.0V, V DS =V DD -0.5V 2.5 4.5 7.0 V DD =4.0V, V DS =V DD -0.5V 4.5 6.2 8.0 Output current I OUTP [Pch] V DD >V DET- V DD =5.5V, V DS =V DD -0.5V 6.5 8.2 9.8 mA t d=50ms 42.5 50 57.5 t d=100ms 85 100 115 Delay time t d t d=200ms 170 200 230 ms Response time t PHL V DD : (V DET- (S))+1.0V ===> 0.9V - - 80 µs Detecting voltage temperature coefficient ∆V DET ∆T opt -40 °C T opt 85 °C - ±100 - ppm/ °C (T a =25°C RL= ∞ unless otherwise specified) Item Symbol Conditions Min. Typ. Max. Unit Detecting voltage V DET- - V DET- (S) ×0.98 V DET- (S) V DET- (S) ×1.02 V Hysteresis width V HYS V HYS =(V DET+ )-(V DET- ) V DET- *0.03 V DET- *0.05 V DET- *0.07 V V DD =2.5V, V DET- (S)=1.5V - 350 700 V DD =3.7V, V DET- (S)=2.7V - 350 700 Consumption current 1 I SS1 V DD =5.5V, V DET- (S)=4.6V - 350 700 nA V DD =1.3V, V DET- (S)=1.5V - 280 560 V DD =2.5V, V DET- (S)=2.7V - 280 560 Consumption current 2 I SS2 V DD =4.4V, V DET- (S)=4.6V - 280 560 nA Max. operating voltage V DDH - - - 5.5 V Min. operating voltage V DDL - 0.9 - - V V DD =0.9V, V DS =0.5V 0.2 0.8 1.5 V DD =1.2V, V DS =0.5V 1.0 2.2 3.5 Output current of output transistor I OUTN [Nch] V DD DET- V DD =2.4V, V DS =0.5V 5.5 6.8 8.1 mA Leak current of output transistor I LEAK V DD =5.5V,V DS =5.5V - - 0.1 µA t d=50ms 42.5 50 57.5 t d=100ms 85 100 115 Delay time t d t d=200ms 170 200 230 ms Response time t PHL V DD : (V DET- (S))+1.0V ===> 0.9V - - 80 µs Detecting voltage temperature coefficient ∆V DET ∆T opt -40 °C T opt 85 °C - ±100 - ppm/ °C
(2) Nch open drain output